PIN Diodes

Silicon PIN photodiodes are reverse-biased PIN diodes which detect light and generate current as a result. Silicon PIN photodiodes are available with a wide variety of active areas to accommodate many varied applications. The PIN photodiode structure has an intrinsic layer within the depletion region, which allows high quantum efficiency and fast response for detection of photons in the 400 nm to 1100 nm range.

Options from Excelitas include the YAG series, quadrant detectors, UV enhanced PIN photodiodes and the C30xxx range which covers the spectral range from 220nm through to 1700nm.

The YAG series devices are high quality large area PIN photodiodes that use a thicker Si material to enhance the near IR response. Excelitas quadrant detectors are designed with 4 pie-shaped quadrant sections – this reduces the dead space between each quadrant to almost zero, and allows precise beam positioning to be achieved. Each quadrant is connected to an isolated lead.

The C30741 Silicon PIN diode provides fast response and good quantum efficiency between 300 nm and 1100 nm. These photodiodes are offered in plastic package, either TO style or SMD packages with a visible blocking filter option, and are designed for high-speed, high-volume production and cost sensitive applications.

The Excelitas UV series are high quality Si PIN photodiodes in hermatically sealed TO packages, designed for the 220nm to 1100nm wavelength region with enhanced operation in the UV range. Low noise detection is achieved by operating the UV series in photovoltaic mode (0V bias).

The InGaAs PIN detectors provide high quantum efficiency from 800 nm to 1700nm. They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within 2% across the detector active area.

Options from Excelitas include the YAG series, quadrant detectors, UV enhanced PIN photodiodes and the C30xxx range which covers the spectral range from 220nm through to 1700nm.

Industrial Applications

Silicon and InGaAs PIN photodiodes are available with a wide variety of active areas to accommodate many varied applications. The PIN photodiode structure has an intrinsic layer within the depletion region, which allows high quantum efficiency and fast response for detection of photons in the 400nm to 1100nm range.

Large Area InGaAs PIN This family of large-area InGaAs PIN photodiodes provides high responsivity from 800nm to 1700nm for applications including optical power meters, fiber optic test equipment, near-IR spectroscopy and instrumentation. The C30619, C30641, C30642, C30665 and C30723
Silicon Quadrants The YAG series devices are high quality large area PIN photodiodes that use a thicker Si material to enhance the near IR response. Excelitas quadrant detectors are designed with 4 pie-shaped quadrant sections – this reduces the dead space between each quadrant to almost zero, and allows precise beam positioning to be achieved. Each quadrant is connected to an isolated lead.