APDs Avalanche Photodiodes

An Avalanche Photodiode (APD) is a photodetector that provides a built-in first stage of gain via avalanche multiplication. Provision of this internal signal gain is what differentiates an APD from a PIN photodiode. An APD provides higher sensitivity and so is ideal for extreme low-level light detection and photon counting. Available as Silicon or InGaAs photodiodes, these devices detect in the 400nm - 1100nm range. Multiple configurations are available to provide a wide range of sensitivity and speed options.

The use of avalanche photodiodes instead of PIN photodetectors will result in improved sensitivity - useful in applications where the noise of the amplifier is high i.e. much higher than the noise in the photodetector. Thus, although an APD is always noisier than the equivalent PIN, improved signal-to-noise can be achieved in the system for APD gains up to the point where the noise of the APD is comparable to that of the amplifier. In very low bandwidth systems, the noise of the amplifier is likely to be very low, in which case, an avalanche photodiode may not be the best choice.

Our full detector range can be accessed from the drop-down COMPONENTS menu above, and we can also help with customisation and bespoke assembly design.

Excelitas offer products including:

High-volume, cost effective silicon APDs for Range Finding and Laser Meter applications
Large area, UV-enhanced versions for Molecular Imaging (PET).
Long wavelength enhanced versions for Analytical Applications.
Multi element and quadrant APDs for Analytical Instruments.
Standard, high performing versions for Industrial applications.

APD avalanche photodiode range from Excelitas including APD

APDs are widely used in instrumentation and aerospace applications, offering a combination of high speed and high sensitivity

C30737MH New SMD

The Excelitas C30737 series silicon APDs provide high responsivity between 500 nm and 1000 nm as well as extremely fast rise times at all wavelengths, with a frequency response above 1 GHz for bandwidth-optimised versions. The new C30737MH is designed for high-volume, high-performance, cost-sensitive product designs such as automotive LiDAR, 905 nm range-finding devices, 635 nm and 650 nm laser meters, speed measurement, area scanners for safety, surveillance, or automatic door opening, optical communication, 3D laser scanning, and gesture recognition.

Data Sheet

Long Wavelength 1060nm Enhanced APDs

Excelitas’ C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes is such that their long wave response (i.e. > 900 nm) has been enhanced without introducing any undesirable properties.

High Quantum Efficiency of up to 40% at 1060nm while retaining low noise, low capacitance, and fast rise and fall times.

Data Sheet

Analytical and Industrial Applications

These rear entry “reach-through” silicon APDs offer the best compromise in terms of cost and performance for applications requiring high speed and low noise photon detection from 400 nm up to 1100 nm. They feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage.

Data Sheet

APDs for Rangefinding

The Excelitas C30737 series silicon APDs provide high responsivity between 500 nm and 1000 nm as well as extremely fast rise times at all wavelengths, with a frequency response above 1 GHz for bandwidth-optimised versions. The C30724, as a low gain APD, can be operated at a fixed voltage without the need for temperature compensation.

Data Sheet

UV Enhanced APDs

The C30739ECERH Silicon Avalanche Photodiode (APD) is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm. It has low noise, low capacitance and high gain. It is designed to have an enhanced short wavelength sensitivity, with quantum efficiency of 60 % at 430 nm.

Data Sheet

InGaAs APDs

The C30644, C30645 and C30662 Series APDs are high speed, large area InGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency, (QE), high responsivity and low noise in the spectral range between 1100 nm and 1700 nm, with standard active areas up to 200 µm in diameter. They are optimized for use at a wavelength of 1550 nm, ideally suitable for use in eye-safe laser range finding systems.

Data Sheet

APD Arrays

The C30927 series of quadrant Si Avalanche Photodiode and the C30985E multi-element APD array utilize the double-diffused “reach-through” structure. This structure provides ultra high sensitivity at 400-1000 nm.

Data Sheet

C30902SH The C30902EH series of avalanche photodiodes is fabricated with a double-diffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO-18 package. The useful diameter of the photosensitive surface is 0.5 mm. 0.475mm photosensitive diameter, dead time filter 20ns, photon detection efficiency >70% at 700nm

Data Sheet

LLAM The LLAM series of Silicon and InGaAs avalanche photodiodes (APD) receiver modules feature an APD, thermoelectric cooler (TEC) and a hybrid, all in the same hermetically-sealed modified 12-lead TO-66 flange package for increased heat sinking. The use of a TEC eases the burden on the APD bias control to insure constant responsivity over a 5°C to 40°C ambient temperature range.

Data Sheet