Pulsed Lasers

Excelitas offers a broad range of suited pulsed 905 nm lasers offering up to 100W of peak optical output power, which can be increased to up to 300W of peak optical output power by physical stacking. 1550 nm pulsed lasers are also offered.

Critical parameters of these semiconductor pulsed lasers are pulse-width and rise/fall times. The pulse width may be reduced allowing for increased current drive and resulting in higher peak optical power. Quantum well laser design offers rise and fall times of < 1 ns however the drive circuit lay out and package inductance play the greater role and should be designed accordingly.

Excelitas core competencies include: MOVPE wafer growth; wafer processing of the grown GaAs wafers; assembly using either epoxy or solder die attach; epoxy encapsulation of lasers mounted on lead frame; hermetically sealed product qualification to MIL STD and custom requirements.

Pulsed semiconductor lasers in the near IR are commonly used for long distance time-of-flight or phase-shift range finder systems.

Lasers for Laser Range Finding

Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak optical output power. Physical stacking of laser chips is also possible, resulting in up to 300 W of peak optical output power.

Single Channel SMD Laser

Excelitas’ pulsed semiconductor laser produces very high peak optical pulses centered at a wavelength of 905 nm. The package design can emit light parallel or perpendicular to the mounting plane. Uses a multi-layer monolithic chip design. The laser diode is mounted on an FR4 substrate leadless laminate carrier (LLC) with excellent thermal management, intended for both surface mount applications and hybrid integration.

Four Channel SMD Laser

High power four channel pulsed semiconductor laser array for LIDAR and Range Finding. Very high peak optical pulses centered at a wavelength of 905 nm - a concentrated emitting source size for high power into aperture. Two versions available – one with the channels close together allowing the lasers to be operated as one large laser with no gaps between channels in the near field, the other version with each channel individually addressable. The laser diode is mounted on an FR4 substrate leadless laminate carrier (LLC) with excellent thermal management , ideally suited for both surface mount applications and hybrid integration. The encapsulate material is a molded epoxy resin for low cost and high-volume manufacturing.

PGA Series - Single Epi

Excelitas Technologies’ PGA pulsed laser series consists of hermetically packaged devices having a single-active lasing layer, which are epitaxially grown on a single GaAs substrate chip. The laser chips feature stripe widths of 75 to 600 µm and can be stacked to further increase the output power.

This datasheet covers the PGAS single epi versions.

PGA Series - Multi Epi

The PGA Series lasers are also available as multi-epi devices, having up to four active lasing cavities, which are epitaxially grown on a single GaAs substrate chip. This multi-cavity design multiplies the output power by the number of epi-layers.

This datasheet covers single, double, triple, and quadruple epi-cavity versions.

PGEW Series - Low Cost

The PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers are low-cost high-power laser diodes. The T1 ¾ (TO-like) plastic encapsulated package is ideally suited for high volume applications such as laser range finding, IR illumination or laser skin therapy.

The lasers employ Excelitas’ novel multi-active area laser chips to deliver high output power in a small emitting area.

PVG Series - 1550nm

The PVG series of high power pulsed laser diodes are multi-quantum well devices with active layers fabricated using advanced MOCVD epitaxial growth techniques. The devices are offered housed in two convenient hermetic package configurations, the “S” style  TO-18 style low inductance package and the “R” style CD 9 mm outline providing increased thermal dissipation.

This series of devices are wavelength-centred at 1550nm primarily, aimed at eye-safe laser range finding applications.